Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2008-04-29
2008-04-29
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S737000, C257S779000, C257SE23001, C438S106000
Reexamination Certificate
active
11197338
ABSTRACT:
A semiconductor device, comprising: a semiconductor substrate in which an integrated circuit is formed, the semiconductor substrate having an electrode electrically connected to the integrated circuit; a resin layer formed on a face in which the electrode of the semiconductor substrate is formed, as to avoid the electrode; a wiring formed as to have a protruding portion projecting upwards on the resin layer, the wiring being electrically connected to the electrode; and a solder formed on the protruding portion of the wiring, wherein the upper face portion of the protruding portion is melt-eroded by the solder and the material of the protruding portion.
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Examination result issued in corresponding Japanese application.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Trinh (Vikki) Hoa B
Weiss Howard
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