Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Making passive device – Planar capacitor

Reexamination Certificate

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C438S240000, C438S396000

Reexamination Certificate

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10886667

ABSTRACT:
A semiconductor device has a plurality of capacitors. The semiconductor device includes a first capacitor arranged on a substrate and including first upper and lower electrode layers between which a first capacitor insulation film is interposed, and a second capacitor arranged on the substrate and including second upper and lower electrode layers between which a second capacitor insulation film is interposed, the second upper and lower electrode layers having a same structure as that of the first upper and lower electrode layers, and the second capacitor having a per-unit-area capacity different from that of the first capacitor.

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Notification of Reasons for Rejection, issued by Japanese Patent Office, mailed Mar. 22, 2005, in Japanese Patent Application No. 2002-313049, and English-language translation thereof.
First Notification of Reasons for Rejection, dated Apr. 29, 2005, issued by the Chinese Patent Office in a counterpart Chinese application.

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