Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2007-08-07
2007-08-07
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S240000, C438S396000
Reexamination Certificate
active
10886667
ABSTRACT:
A semiconductor device has a plurality of capacitors. The semiconductor device includes a first capacitor arranged on a substrate and including first upper and lower electrode layers between which a first capacitor insulation film is interposed, and a second capacitor arranged on the substrate and including second upper and lower electrode layers between which a second capacitor insulation film is interposed, the second upper and lower electrode layers having a same structure as that of the first upper and lower electrode layers, and the second capacitor having a per-unit-area capacity different from that of the first capacitor.
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First Notification of Reasons for Rejection, dated Apr. 29, 2005, issued by the Chinese Patent Office in a counterpart Chinese application.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Thomas Toniae M.
Wilczewski Mary
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