Semiconductor device, and method for manufacturing the same

Details Semiconductor device, and method for manufacturing the same Semiconductor device, and method for manufacturing the same

2007-02-20

2007-02-20

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S086000, C257S094000, C257S098000

Reexamination Certificate

active

10936793

ABSTRACT:
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More specifically, in a semiconductor device having multiple layers, at least one of the layers includes iron silicide. At least part of the layer including iron silicide is subjected to oxidation processing.

REFERENCES:
patent: 5696023 (1997-12-01), Holonyak et al.
patent: 6368889 (2002-04-01), Suemasu
patent: 6697403 (2004-02-01), Lee et al.
patent: 6835959 (2004-12-01), Ouchi
patent: 2000-312055 (2000-11-01), None
D. Leong, et al., “A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5μm”, Nature, vol. 387, Jun. 12, 1997, pp. 686-688.
D. L. Huffacker, et al., “Native-oxide defined ring contact for low threshold vertical-cavity lasers”, Appl. Phys. Lett., 65 (1), Jul. 4, 1995, pp. 97-99.

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