Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-04-17
2007-04-17
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S762000, C257SE21174, C257SE23152
Reexamination Certificate
active
10888518
ABSTRACT:
A semiconductor device including a multilevel wiring with a small interwiring capacitance is provided by comprising a wiring, a conductive film formed on an upper surface of the wiring to prevent diffusion of a wiring material, and an insulating film which is constituted of low dielectric constant insulating films stacked to form at least two layers, an interface thereof being positioned in a side face of the wiring.
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Tsumura Kazumichi
Usui Takamasa
Anya Igwe U.
Baumeister B. William
Foley & Lardner LLP
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