Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-03-13
2007-03-13
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S347000, C257S057000, C257S059000, C257S066000, C257S366000, C257S350000
Reexamination Certificate
active
10105625
ABSTRACT:
A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.
REFERENCES:
patent: 3823349 (1974-07-01), Dhaka et al.
patent: 4748485 (1988-05-01), Vasudev
patent: 4954855 (1990-09-01), Mimura et al.
patent: 5017983 (1991-05-01), Wu
patent: 5053354 (1991-10-01), Tanaka et al.
patent: 5075674 (1991-12-01), Katayama et al.
patent: 5079606 (1992-01-01), Yamamura et al.
patent: 5140391 (1992-08-01), Hayashi et al.
patent: 5188973 (1993-02-01), Omura et al.
patent: 5273921 (1993-12-01), Neudeck et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5338959 (1994-08-01), Kim et al.
patent: 5339181 (1994-08-01), Kim et al.
patent: 5367180 (1994-11-01), Asai et al.
patent: 5371398 (1994-12-01), Nishihara
patent: 5396084 (1995-03-01), Matsumoto
patent: 5430320 (1995-07-01), Lee
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5461419 (1995-10-01), Yamada
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5495119 (1996-02-01), Ikeuchi
patent: 5497019 (1996-03-01), Mayer et al.
patent: 5567959 (1996-10-01), Mineji
patent: 5616944 (1997-04-01), Mizutani et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5644147 (1997-07-01), Yamazaki et al.
patent: 5672888 (1997-09-01), Nakamura
patent: 5801397 (1998-09-01), Cunningham
patent: 5808595 (1998-09-01), Kubota et al.
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 5835177 (1998-11-01), Dohjo et al.
patent: 5879969 (1999-03-01), Yamazaki et al.
patent: 5917225 (1999-06-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923963 (1999-07-01), Yamanaka
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6252248 (2001-06-01), Sano et al.
patent: 6326642 (2001-12-01), Yamazaki et al.
patent: 6327006 (2001-12-01), Sato et al.
patent: 6342717 (2002-01-01), Komatsu
patent: 6383904 (2002-05-01), Yu
patent: 6493046 (2002-12-01), Ueda
patent: 6504173 (2003-01-01), Hsu et al.
patent: 6583828 (2003-06-01), Wada et al.
patent: 6624450 (2003-09-01), Yamazaki et al.
patent: 6639246 (2003-10-01), Honda
Koyama Jun
Tsunoda Akira
Yamazaki Shunpei
Gebremariam Samuel A
Owens Douglas W.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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