Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-02-14
2006-02-14
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000
Reexamination Certificate
active
06998712
ABSTRACT:
In a provided semiconductor device, a plurality of seal rings each made of a conductive material is formed along a periphery of the semiconductor chip and as to surround the circuit formation portion, the seal rings being connected with the semiconductor substrate and being buried in the plurality of wiring insulating films in such a manner as to extend over the wiring insulating films, and one or more slit-like notches are formed at specified positions in the plurality of seal rings in such a manner that the respective slit-like notches in two seal rings being adjacent to each other are not aligned.
REFERENCES:
patent: 2002/0024115 (2002-02-01), Ibnabdeljalil et al.
patent: 2002/0125577 (2002-09-01), Komada
patent: 2000-232104 (2000-08-01), None
Aizawa Hirokazu
Minda Hiroyasu
Okada Norio
McGinn IP Law Group PLLC
NEC Electronics Corporation
Tsai H. Jey
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