Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-03-28

2006-03-28

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S745000, C438S168000

Reexamination Certificate

active

07019336

ABSTRACT:
In a nitride-system semiconductor, being different from GaAs and Si, Schottky barrier heights ΦBchange significantly against work functions ΦMof metals. Then, for example, on an HEMT in which a buffer layer and a barrier layer constituted by nitride-system semiconductors are sequentially formed on a substrate, and a gate electrode is formed on the barrier layer, when a metal having a relatively large work function ΦMis selected as a metal constituting the gate electrode, and the thickness of the barrier layer is adjusted so that the Schottky barrier height ΦBbecomes larger as compared to a semiconductor surface potential ΦSon both sides of the gate electrode, a two-dimensional electron gas cannot exist below the gate electrode even when no recess is formed on a portion immediately beneath the gate electrode on the barrier layer, so that the enhancement operation becomes possible.

REFERENCES:
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patent: 2003-100775 (2003-04-01), None

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