Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-04-25

2006-04-25

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S250000, C257S332000, C257S241000, C257S314000, C257S315000

Reexamination Certificate

active

07034346

ABSTRACT:
A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.

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S. Wolf, “SiliconProcessing for the VLSI Era, vol. 2: Process Integration,” Lattice Press, Sunset Beach, CA (1990), pp. 143-147,273.

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