Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-03-28

2006-03-28

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S239000, C438S240000, C438S942000, C438S396000, C257S295000, C257S305000

Reexamination Certificate

active

07018854

ABSTRACT:
The invention provides a semiconductor device and a method for manufacturing the same that are capable of improving the product performance and operational efficiency of a cross-point FeRAM, as well as increasing the area of capacitors included in the cross-point FeRAM. An upper electrode supporting layer forming mask for forming an upper electrode supporting layer can be made of a hard mask material. By making use of the upper electrode supporting layer forming mask remaining unremoved in forming and processing a lower electrode layer, prior to forming an upper electrode layer, a region where a ferroelectric capacitor is formed can be made larger than an area occupied by an intersection of the upper electrode layer and the lower electrode layer.

REFERENCES:
patent: 5401680 (1995-03-01), Abt et al.
patent: 5801410 (1998-09-01), Kim
patent: 6850429 (2005-02-01), Rinerson et al.
patent: A-9-116107 (1997-05-01), None

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