Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-05-16

2006-05-16

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S975000, C257S797000

Reexamination Certificate

active

07045434

ABSTRACT:
A method for manufacturing a semiconductor substrate including a mask aligning trench. The method includes forming the mask aligning trench and an element partitioning trench. The element partitioning and mask aligning trenches are filled with insulation. The insulation in the element partitioning trench is masked and the insulation in the mask aligning trench is etched. As a result, a residue of the insulation in the mask aligning trench is below the upper edge of the mask aligning trench. The mask aligning trench is easily detected. Thus, positioning a patterning mask on the substrate can be performed accurately.

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Wolf et al., Silicon Processing for the VLSI Era, vol. 1- Process Technology, 1986, Lattice Press, p. 1.

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