Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-06-14

2005-06-14

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S464000, C438S618000

Reexamination Certificate

active

06905972

ABSTRACT:
A method of manufacturing a semiconductor device comprising a plurality of single-crystal semiconductor layers formed, for example, in an opening of an insulating film, said semiconductor layers having no or very few crystal defects. The method comprises forming in a first growth chamber a first semiconductor layer of a first conductivity type in an opening of an insulating film and subsequently forming in a second growth chamber a second semiconductor layer of a second conductivity type in an opening of an insulating film, while supplying hydrogen to the surface of the substrate when the substrate is transferred from said first growth chamber to said second growth chamber.

REFERENCES:
patent: 5321301 (1994-06-01), Sato et al.
patent: 5766360 (1998-06-01), Sato et al.
patent: 5962880 (1999-10-01), Oda et al.
patent: 6488778 (2002-12-01), Ballantine et al.
patent: 10-041321 (1996-07-01), None

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