Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-07-26

2005-07-26

Reichard, Dean A. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S304000, C361S301400, C257S758000, C257S759000, C438S250000, C438S253000

Reexamination Certificate

active

06922328

ABSTRACT:
The invention provides a semiconductor device and a method for manufacturing the same that are capable of contributing to a further chip downsizing in the cross-point FeRAM. More particularly, a first local wiring can be formed on a first interlayer insulating layer so as to connect a drain region and part of a gate electrode in a MOS transistor and a top layer wiring. A second local wiring can be formed on a second interlayer insulating layer so as to connect a source region in the MOS transistor and a lower electrode layer in a ferroelectric capacitor, and further to connect part of a gate electrode in the MOS transistor and the top layer wiring. The MOS transistor that makes up of a peripheral circuitry using only the first and second local wiring can be formed directly under a capacitor array forming region of cross-point FeRAM.

REFERENCES:
patent: 6190957 (2001-02-01), Mochizuki et al.
patent: 6521528 (2003-02-01), Asamura
patent: 6699726 (2004-03-01), Hidaka et al.
patent: 6744085 (2004-06-01), Maruyama et al.
patent: A 02-154389 (1990-06-01), None
patent: A 07-115141 (1995-05-01), None
patent: A 07-235648 (1995-09-01), None
patent: A 07-235678 (1995-09-01), None
patent: A-9-116107 (1997-05-01), None
patent: A 2002-026283 (2002-01-01), None
patent: A 2003-123465 (2003-04-01), None
patent: A 2003-168783 (2003-06-01), None

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