Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1998-02-24

1999-01-26

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257627, 257923, 438640, 438701, 438429, 438481, H01L 2136

Patent

active

058641807

ABSTRACT:
A semiconductor device and a method for manufacturing the same, in which a leak current generated in a pn junction formed between a silicon substrate and an epitaxial layer can be reduced. A silicon oxide film is formed on a silicon substrate having a (100) crystal plane. The silicon oxide film is patterned to form an opened portion and an inclined surface on a pattern edge of the silicon oxide film. The inclined surface forms an angle of 54.74.+-.5.degree. with the silicon substrate. An epitaxial layer is formed in the opened portion by selective epitaxial growth.

REFERENCES:
patent: 4184172 (1980-01-01), Raffel et al.
patent: 4467521 (1984-08-01), Spooner et al.
patent: 4728624 (1988-03-01), Silvestri et al.
patent: 4834809 (1989-05-01), Kakihara
patent: 5034342 (1991-07-01), Sidner et al.
patent: 5317193 (1994-05-01), Watanabe
patent: 5416354 (1995-05-01), Blackstone
patent: 5422299 (1995-06-01), Neudeck et al.
patent: 5589695 (1996-12-01), Malhi
patent: 5675185 (1997-10-01), Chen et al.
patent: 5723895 (1998-03-01), Takahashi
patent: 5746884 (1998-05-01), Gupta et al.
patent: 5777365 (1998-07-01), Yamaguchi et al.

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