Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-06-18
1985-09-10
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29577C, 29578, 29580, 148 15, 148174, 148175, 148188, H01L 21225, H01L 21302
Patent
active
045397422
ABSTRACT:
A semiconductor device wherein collector connecting wiring made of for example n.sup.+ -type polycrystalline silicon layer is formed by an anisotropic etching which simultaneously engrave a groove in a semiconductor substrate. A collector layer is formed on a non-etched projection, while base contact hole is formed in the lower portion of the groove. Therefore, the base contact hole is not contacted with collector layer, thus preventing the flow of a leakage current and short-circuiting therebetween.
REFERENCES:
patent: 4220961 (1980-09-01), Werner
patent: 4288805 (1981-09-01), Depey
patent: 4338622 (1982-07-01), Feth et al.
patent: 4377903 (1983-03-01), Kanzaki et al.
patent: 4407059 (1983-10-01), Sasaki
patent: 4433470 (1984-02-01), Kameyama et al.
Tang et al., IEDM Dig. Tech. Papers, "Sub-Nanosecond Self-Aligned I.sup.2 L/MTL Circuits" 1979, (pp. 201-204).
Kanzaki Koichi
Taguchi Minoru
Auyang Hunter L.
Hearn Brian E.
Tokyo Shibaura Denki Kabushiki Kaisha
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