Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1990-09-28

1993-01-26

Fourson, George

Fishing, trapping, and vermin destroying

437 73, H01L 2176

Patent

active

051822270

ABSTRACT:
MOS transistors connected to each other are electrically isolated at both ends of a transfer gate by an LOCOS oxide film, and the bottom surface in a trenched capacitor portion and the side wall of a trench between adjacent capacitors are electrically isolated. A leakage current can be reduced, so that a semiconductor device comprising a capacitor having a reduced occupied area and large capacitance can be obtained.

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Wolf, S., Silicon Processing for the VLSI ERA, vol. 2, Jun. 1990, pp. 33, 48.
Technical Digest, International Electron Device Meeting 1984, pp. 236-239, Nakamura et al.

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