Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1997-12-15
1999-11-23
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
H01L 23544
Patent
active
059905409
ABSTRACT:
A mask pattern applied to a peripheral portion of a wafer has an open/close ratio substantially the same as that in a central portion thereof and prepared according to a looser design rule than that for forming the central portion. The looser design rule has a high latitude for out-of-focus exposure and provides high resistance to pattern removal. Since the open/close ratios in the central portion and the peripheral portion of the wafer are substantially the same, variance in process accuracy due to a micro-loading effect can be prevented.
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Kabushiki Kaisha Toshiba
Thomas Tom
Tran Thien Fuong
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