Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-08-23

2011-08-23

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S698000, C257S773000, C257S775000, C257SE21577, C257SE21578

Reexamination Certificate

active

08004090

ABSTRACT:
A first insulating layer including a first contact pad made of conductive polysilicon and a second insulating layer including a second contact pad are formed over a semiconductor silicon layer. After this, a via hole for a through-hole electrode is formed until the via hole penetrates through at least the semiconductor silicon layer and the first contact pad and reaches to the second contact pad.

REFERENCES:
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patent: 2007/0262464 (2007-11-01), Watkins et al.
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P.S. Andry et al., A CMOS-compatible Process for Fabricating Electrical Through-vias in Silicon, 2006 Electronic Components and Technology Conference, pp. 1-7.

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