Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

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C257S713000, C257S717000

Reexamination Certificate

active

07911050

ABSTRACT:
A COF which can effectively dissipate the heat by using a simple structure and its manufacturing method. A semiconductor device of COF, which is formed over the main surface of a flexible substrate having no device hole and where a semiconductor chip is mounted over the inner lead interconnection, is characterized by forming a first resin layer over the second main surface of the flexible substrate opposite the side where the semiconductor chip is mounted and at the position corresponding to the semiconductor chip.

REFERENCES:
patent: 5424251 (1995-06-01), Sono et al.
patent: 5763940 (1998-06-01), Shibusawa et al.
patent: 6674155 (2004-01-01), Nakahara et al.
patent: 6908790 (2005-06-01), Nakahara et al.
patent: 7339262 (2008-03-01), Son et al.
patent: 2005/0277231 (2005-12-01), Hembree et al.
patent: 06-140538 (1994-05-01), None
patent: 6-310621 (1994-11-01), None
patent: 8-279533 (1996-10-01), None
patent: 8-279567 (1996-10-01), None
patent: 10-125834 (1998-05-01), None
patent: 2003-303928 (2003-10-01), None
patent: 2005-276943 (2005-10-01), None
patent: 2006-64939 (2006-03-01), None
patent: 2006-108356 (2006-04-01), None
A machine translation of Japanese Patent Application Publication No. 10-125834 A has been provided and is attached.
Chinese Action dated Jun. 25, 2010 (with an English language translation).

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