Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2011-03-22
2011-03-22
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S713000, C257S717000
Reexamination Certificate
active
07911050
ABSTRACT:
A COF which can effectively dissipate the heat by using a simple structure and its manufacturing method. A semiconductor device of COF, which is formed over the main surface of a flexible substrate having no device hole and where a semiconductor chip is mounted over the inner lead interconnection, is characterized by forming a first resin layer over the second main surface of the flexible substrate opposite the side where the semiconductor chip is mounted and at the position corresponding to the semiconductor chip.
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A machine translation of Japanese Patent Application Publication No. 10-125834 A has been provided and is attached.
Chinese Action dated Jun. 25, 2010 (with an English language translation).
McGinn IP Law Group PLLC
Patton Paul E
Renesas Electronics Corporation
Smith Zandra
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