Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE21008, C257SE21530, C438S018000

Reexamination Certificate

active

07932579

ABSTRACT:
A semiconductor device including a capacitor formed over a semiconductor substrate and including a lower electrode, a dielectric film formed over the lower electrode and an upper electrode formed over the dielectric film, an insulation film formed over the semiconductor substrate and the capacitor, and an electrode pad formed over the insulation film and including an alloy film of aluminum and magnesium.

REFERENCES:
patent: 5523595 (1996-06-01), Takenaka et al.
patent: 5565378 (1996-10-01), Harada et al.
patent: 2002/0056862 (2002-05-01), Miki et al.
patent: 2004/0188851 (2004-09-01), Takewaki et al.
patent: 2005/0002266 (2005-01-01), Kanaya et al.
patent: 11-233542 (1999-08-01), None
patent: 2004-509479 (2004-03-01), None
patent: 2004-296621 (2004-10-01), None
patent: 2004-349474 (2004-12-01), None
patent: 2005-327962 (2005-11-01), None
patent: 02/25825 (2002-03-01), None
International Search Report of PCT/JP2005/021810, date of mailing Mar. 14, 2006.

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