Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-03-22

2011-03-22

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C438S931000, C438S983000, C257SE21356, C257SE21054, C257SE21541

Reexamination Certificate

active

07910411

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a cell region, an outer peripheral region, a field plate, an outermost peripheral ring, outer peripheral region layer, an insulator film, and a Zener diode. The semiconductor substrate has a superjunction structure. The outer peripheral region is disposed at an outer periphery of the cell region. The Zener diode is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring. The Zener diode has a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.

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