Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257515, 257586, H01L 21306

Patent

active

061277207

ABSTRACT:
A semiconductor device provided with a wide and shallow first groove and a second groove in the first groove area, having a narrower width than that of the first groove around a predetermined area in a one-conductive area provided in the upper region of a semiconductor substrate as a mesa groove, wherein at least the second groove is covered with an electrical insulator. The upper surface of the electrical insulator is located approximately as high as or lower than the upper surface of the electrical insulating film. Thus, especially in a mesa semiconductor device with a high-voltage resistance, an insulating protective layer having a sufficient thickness can be formed stably over the entire region of a mesa groove. As a result, the variation in high-voltage resistance characteristics can be decreased and the processing yield affected by breakage or cracking in the mesa groove region during subsequent processes caused by the formation of the mesa groove can be improved greatly.

REFERENCES:
patent: 3886005 (1975-05-01), Cota et al.
patent: 4249195 (1981-02-01), Roger
patent: 4445967 (1984-05-01), Kameyama et al.
patent: 4561172 (1985-12-01), Slawinski et al.
patent: 4982269 (1991-01-01), Calligaro
patent: 5149663 (1992-09-01), Chai et al.
patent: 5436495 (1995-07-01), Sakamoto
patent: 5493149 (1996-02-01), Jerome et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-198459

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.