Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2006-11-20

2011-10-11

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S734000, C257S750000, C257S773000, C257SE21577, C257SE23145, C257SE23011, C257SE23001, C257SE23151, C257SE23141, C257SE21575

Reexamination Certificate

active

08035230

ABSTRACT:
This invention discloses a semiconductor device including an insulating film having a recess therein; an electric conductor formed inside the recess; a manganese silicate film formed on an upper surface of the conductor, the manganese silicate film being formed of a reaction product of a manganese with a silicon oxide insulating film. A method for manufacturing such a semiconductor device is also described.

REFERENCES:
patent: 7485915 (2009-02-01), Nasu et al.
patent: 2005/0218519 (2005-10-01), Koike et al.
patent: 2005-277390 (2005-10-01), None
patent: 2007-012923 (2007-01-01), None
T. Usui et al.; Low Resistive and Highly reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSixOy Barrier Layer; Semiconductor Technology Academic Research Center, Oct. 2006.
Z. C. Wu et al.; High Performace 90/65nm BEOL Technology with CVD Porous Low-K Dielectrics (K-2.5) and Low-K ETching Stop (K-3,0); ); )-7803-7873-3/03 2003 IEEE.
Japanese Office Action dated Feb. 26, 2010 for Application No. JP 2005-335309.

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