Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2008-08-07

2010-06-01

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S183000, C257S189000, C438S235000

Reexamination Certificate

active

07728358

ABSTRACT:
The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.

REFERENCES:
patent: 5504018 (1996-04-01), Sato
patent: 6699741 (2004-03-01), Sadovnikov et al.
patent: 2002/0142557 (2002-10-01), Hashimoto et al.
patent: 2003-045885 (2003-02-01), None
patent: 2003-188177 (2003-07-01), None
patent: 2005-057171 (2005-03-01), None
patent: 2004-193454 (2007-07-01), None
Chinese Patent Office issued a Chinese Office Action dated Nov. 27, 2009, Application No. 200810145329.1.

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