Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2005-02-25

2009-11-24

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S335000, C257S548000, C257S549000, C257SE21056, C257SE21054, C257SE21065

Reexamination Certificate

active

07622741

ABSTRACT:
A semiconductor device of a double diffused MOS structure employing a silicon carbide semiconductor substrate. The semiconductor device comprises a silicon carbide semiconductor epitaxial layer provided on a surface of the silicon carbide semiconductor substrate and having a first conductivity which is the same conductivity as the silicon carbide semiconductor substrate, and an impurity region formed by doping a surface portion of the silicon carbide semiconductor epitaxial layer with an impurity of a second conductivity, the impurity region having a profile such that a near surface thereof has a relatively low second-conductivity impurity concentration and a deep portion thereof has a relatively high second-conductivity impurity concentration.

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