Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2006-07-04

2006-07-04

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S792000

Reexamination Certificate

active

07071116

ABSTRACT:
The temperature of the sputtering process for forming the Ti film is selected to a temperature within a range of from 200 degree C. to 225 degree C. to provide stable film quality against oxidization (step11). The irradiation with ultraviolet is conducted before applying the photo resist to reduce positive electric charge (step12), and nitrogen plasma processing is conducted during the etching of the via hole and after the plasma stripping processing to reduce positive electric charge (steps13and14), and the resistivity of the rinse liquid at the organic stripping is controlled to obtain equal to or lower than 0.3MΩ cm (step15). Further, the RF-spattered thickness during the RF sputtering process for the barrier metal film is set to 18 nm to 22 nm to remove TiOn film (step16).

REFERENCES:
patent: 5470792 (1995-11-01), Yamada
patent: 2003/0181031 (2003-09-01), Kojima et al.
patent: 10-32248 (1998-02-01), None
S. Gwo, et al., “Local Electric-Field-Induced Oxidation of Titanium Nitride Films”. Applied Physics Letters, vol. 74. No. 8, Feb. 22, 1999, pp. 1090-1092.

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