Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2011-01-04

2011-01-04

Stark, Jarrett J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21476, C257SE23010, C257S767000, C438S653000, C438S687000, C438S678000, C438S643000

Reexamination Certificate

active

07863744

ABSTRACT:
A semiconductor device includes an insulating interlayer formed above a silicon substrate and provided with a concave portion in a certain location, a barrier metal film covering an inner wall of the insulating interlayer, a lower layer copper interconnect provided so as to be in contact with the barrier metal film and buried in the interior of the concave portion, and a protective film provided so as to be in contact with the lower layer copper interconnect and also provided on substantially the entire top surface of the lower layer copper interconnect. An upper surface of the lower layer copper interconnect is provided so as to be retracted to be closer to the substrate than an upper surface of barrier metal film on the side wall of the concave portion. The protective film contains Co or Ni as constituent element, and Co concentration or Ni concentration in the protective film in vicinity of the side wall of the barrier metal film is higher than Co concentration or Ni concentration in the barrier metal film in the central region of the concave portion.

REFERENCES:
patent: 7566975 (2009-07-01), Motoyama
patent: 2001/0030366 (2001-10-01), Nakano et al.
patent: 2009/0218697 (2009-09-01), Gotoh et al.
patent: 2004-260106 (2004-09-01), None

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