Semiconductor device and method for manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S290000, C257S431000, C257SE31084, C257SE21618, C438S057000, C438S217000

Reexamination Certificate

active

07948048

ABSTRACT:
In a semiconductor device10including a structure where transfer electrodes2ato2care disposed on a semiconductor substrate1via an insulation layer3, a first semiconductor region4of a first conductivity type, a second semiconductor region5of a conductivity type opposite to the first conductivity type, and a third semiconductor region6of the first conductivity type in a position that overlaps a region of the semiconductor substrate1directly underneath the transfer electrodes2ato2c. The second semiconductor region5is formed on the first semiconductor region4. The third semiconductor region6is formed on the second semiconductor region5so that a position of a maximal point8of electric potential of the second semiconductor region5when being depleted is deeper than a position of the maximal point8in a case where the third semiconductor region6does not exist.

REFERENCES:
patent: 4365261 (1982-12-01), Chatterjee et al.
patent: 4920391 (1990-04-01), Uchida
patent: 4994875 (1991-02-01), Hynecek
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5262661 (1993-11-01), Kuroda et al.
patent: 5627388 (1997-05-01), Shinji
patent: 5675172 (1997-10-01), Miyamoto et al.
patent: 6297113 (2001-10-01), Kawasaki
patent: 6331458 (2001-12-01), Anjum et al.
patent: 6784492 (2004-08-01), Morishita
patent: 6800529 (2004-10-01), Kim
patent: 6818915 (2004-11-01), Koga
patent: 2003/0190788 (2003-10-01), Takagi et al.
patent: 2005/0042793 (2005-02-01), Mouli et al.
patent: 2005/0079667 (2005-04-01), Iwasaki et al.
patent: 2005/0095765 (2005-05-01), Saiki et al.
patent: 57-7963 (1982-01-01), None
patent: 3-227027 (1991-10-01), None
patent: 4-17341 (1992-01-01), None
patent: 4-218966 (1992-08-01), None
patent: 5-47786 (1993-02-01), None
patent: 5-211331 (1993-08-01), None
patent: 7-86588 (1995-03-01), None
patent: 7-161978 (1995-06-01), None
patent: 7-326739 (1995-12-01), None
patent: 8-153873 (1996-06-01), None
patent: 9-312390 (1997-12-01), None
patent: 2000-174249 (2000-06-01), None
patent: 2001-68674 (2001-03-01), None
patent: 2001-230403 (2001-08-01), None
patent: 2003-60203 (2003-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2670994

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.