Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-24
2011-05-24
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000, C257S431000, C257SE31084, C257SE21618, C438S057000, C438S217000
Reexamination Certificate
active
07948048
ABSTRACT:
In a semiconductor device10including a structure where transfer electrodes2ato2care disposed on a semiconductor substrate1via an insulation layer3, a first semiconductor region4of a first conductivity type, a second semiconductor region5of a conductivity type opposite to the first conductivity type, and a third semiconductor region6of the first conductivity type in a position that overlaps a region of the semiconductor substrate1directly underneath the transfer electrodes2ato2c. The second semiconductor region5is formed on the first semiconductor region4. The third semiconductor region6is formed on the second semiconductor region5so that a position of a maximal point8of electric potential of the second semiconductor region5when being depleted is deeper than a position of the maximal point8in a case where the third semiconductor region6does not exist.
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Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
Pert Evan
Rodela Eduardo A
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