Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-07-29
2008-07-29
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C438S452000, C257SE21548, C257SE21550, C257SE21585
Reexamination Certificate
active
07405461
ABSTRACT:
A highly reliable semiconductor device that controls both defects and impurity diffusion and a method for manufacturing such a semiconductor device. An N+embedment layer and an N-type epitaxial layer are formed on a main surface region of a P-type silicon substrate. An STI trench is formed in the N-type epitaxial layer. A thermal oxidation film is formed on the inner surface of the STI trench. The STI trench is filled with an HDP-NSG film. A deep trench is formed in the STI trench with a depth reaching the silicon substrate. A further thermal oxidation film is formed on the inner surface of the deep trench. The thermal oxidation film of the deep trench is thinner than that of the STI trench. A silicon oxidation film is also formed in the deep trench and filled with a polysilicon film.
REFERENCES:
patent: 5578518 (1996-11-01), Koike et al.
patent: 5837612 (1998-11-01), Ajuria et al.
patent: 2003/0017710 (2003-01-01), Yang et al.
patent: 9-8119 (1997-01-01), None
patent: 3382063 (2002-12-01), None
Hoang Quoc
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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