Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2008-07-08
2010-06-15
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S052000, C365S226000
Reexamination Certificate
active
07738276
ABSTRACT:
A first region having a first pattern which includes a first minimum dimension, a second region having a second pattern which includes a second minimum dimension larger the first minimum dimension, the second region being arranged adjacent to the first region, wherein a boundary between the first region and the second region is sectioned by a width which is twice of more of a minimum dimension which exists in an adjacent region.
REFERENCES:
patent: 6128208 (2000-10-01), Itoh et al.
patent: 6404661 (2002-06-01), Hidaka
patent: 6824933 (2004-11-01), Kanaya
patent: 2006/0197136 (2006-09-01), Futatsuyama et al.
patent: 2008/0084728 (2008-04-01), Sakuma et al.
Woo-Yung Jung et al.,“Patterning with spacer for expanding the resolution limit of current lithography tool”, Proc. of SPIE, vol. 6156, 61561J-1, (2006), 9 Pages.
JW Park et al.,Robust Double Exposure Flow for Memory, Proc.SPIE, vol. 6154, 61542E-1, (2006), 10 Pages.
Futatsuyama Takuya
Kotani Toshiya
Yanagidaira Kosuke
Hoang Huan
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device and method for manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4215564