Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-04-24
2010-11-09
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S698000, C257S777000, C257S737000
Reexamination Certificate
active
07829992
ABSTRACT:
A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).
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Katsurayama Satoru
Miyamoto Tetsuya
Sugino Mitsuo
Yamashiro Tomoe
Yamashita Hiroyuki
Luu Chuong A.
Smith , Gambrell & Russell, LLP
Sumitomo Bakelite Company Ltd.
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