Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2007-08-29
2009-10-13
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C438S674000
Reexamination Certificate
active
07602061
ABSTRACT:
Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.
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Gerhard Maier, “The Search for Low-e and ultra-low-e Dielectrics:”, Mar./Apr. 2004, IEEE Electrical Insulation Magazine, Vo. 20, No. 2, pp. 6-117.
G. Kloster et al., “Porosity effects on Low-k dielectric film . . . ”, Jun. 3-5, 2002, Interconnect Technology Conference 2002, Proceeedings of the IEEE International, pp. 242-244.
Japanese Office Action issued on Nov. 25, 2008 corresponding to Japanese Patent Application No. 2006-238628.
Japanese Office Action issued on May 12, 2009 corresponding to JP Application No. 2006-238628.
Kagawa Yoshihisa
Kameshima Takatoshi
Shimayama Tsutomu
Dickey Thomas L
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Yushin Nikolay
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