Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-02-19
2009-12-29
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C438S430000, C257S510000
Reexamination Certificate
active
07638409
ABSTRACT:
A highly reliable semiconductor device that controls both defects and impurity diffusion and a method for manufacturing such a semiconductor device. An N+embedment layer and an N-type epitaxial layer are formed on a main surface region of a P-type silicon substrate. An STI trench is formed in the N-type epitaxial layer. A thermal oxidation film is formed on the inner surface of the STI trench. The STI trench is filled with an HDP-NSG film. A deep trench is formed in the STI trench with a depth reaching the silicon substrate. A further thermal oxidation film is formed on the inner surface of the deep trench. The thermal oxidation film of the deep trench is thinner than that of the STI trench. A silicon oxidation film is also formed in the deep trench and filled with a polysilicon film.
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Doan Theresa T
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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