Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-07-05
2011-07-05
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S368000, C257S618000, C257S773000, C257SE27060, C257SE23141, C257SE33066, C438S458000, C438S149000
Reexamination Certificate
active
07973316
ABSTRACT:
An object is to provide a semiconductor device which is not easily broken even if stressed externally and a method for manufacturing such a semiconductor device. A semiconductor device includes an element layer including a transistor in which a channel is formed in a semiconductor layer and insulating layers which are formed as an upper layer and a lower layer of the transistor respectively, and a plurality of projecting members provided at intervals of from 2 to 200 μm on a surface of the element layer. The longitudinal elastic modulus of the material for forming the plurality of projecting members is lower than that of the materials of the insulating layers.
REFERENCES:
patent: 7566633 (2009-07-01), Koyama et al.
patent: 2006/0202206 (2006-09-01), Koyama et al.
patent: 2005-350823 (2005-12-01), None
patent: 2006-270077 (2006-10-01), None
Gupta Raj
Husch & Blackwell LLP
Pizarro Marcos D
Semiconductor Energy Laboratory Co,. Ltd.
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