Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-07-11
2000-01-04
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438437, 438692, 438424, 148DIG50, H01L 2176
Patent
active
060109475
ABSTRACT:
An end portion of a trench isolating region has a shape of steps so that a residual gate material can be easily removed and it is possible to prevent from conducting between gates. An oxide film 2, a first stopper 3 and a second stopper 4 are formed on a semiconductor substrate 1 (FIG. 1A). The materials of the first and second stoppers may be selected from materials having different oxidation rates, materials having different isotropic etching rates and the combinations thereof. Then, a resist is formed by patterning, and then, the anisotropic etching of the second stopper 4 of a silicon nitride layer, the first stopper 3 of a polycrystal silicon, the oxide film 2 and the semiconductor substance 1 is carried out (FIG. 1B). After peeling off the resist 7, oxidation is carried out by tens nm to form an oxide film 5 (FIG. 1C). At this time, since the first stopper 3 is made of a material which is easily oxidized, the oxide film 5 grows in a lateral direction to be formed therein. Then, a SiO.sub.2 or the like is deposited and implanted to form an insulating film 6 (FIG. 3D). Then, the insulating film 6 is polished by the CMP (FIG. 3E), and the first and second stoppers 3 and 4 are peeled off using the isotropic etching (FIG. 3F).
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Dang Trung
Kabushiki Kaisha Toshiba
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