Semiconductor device and method for making thereof

Details Semiconductor device and method for making thereof Semiconductor device and method for making thereof

1994-02-14

1995-12-19

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 218242

Patent

active

054768063

ABSTRACT:
The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the fist storage electrode; a second contact hole on the even impurity region, the second contact hole having a insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.

REFERENCES:
patent: 5192702 (1993-03-01), Tsemy
patent: 5314835 (1994-05-01), Iguchi et al.
"Spreaded-Vertical-Capacitor Cell (SVC) For Beyond 64MBit Drams", N. Matsuo, et al., IEDM 1991 pp. 473-476.

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