Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1997-11-18
1999-04-13
Bowers, Charles
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438109, 438 15, H01L 2160, H01L 2148
Patent
active
058937463
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
This invention relates to a semiconductor device and also to a method for making the same. More particularly, the invention relates to a semiconductor device which is very thin, is unlikely to break by bending stress, and is suitable for use as various types of cards, and also to a method for making such a thin semiconductor device stably and at low costs.
BACKGROUND ART
The formation of various types of cards such as IC cards has been proposed by utilizing a very thin semiconductor device. Hitherto, it has been difficult to obtain such cards which can stand use in practical applications owing to the ease in breakage by bending stress.
Conventional assembling technologies of thin semiconductor devices are described, for example, in "LSI Handbook" (edited by the Electronic Communication Society and published by Ohom Corporation on Nov. 30, 1984, pp. 406-416). In these conventional semiconductor device assembling technologies, there have been employed semiconductor wafers which have such a thickness of approximately 200 .mu.m or over that they are very unlikely to break when direct handling is done.
As is well known in the art, a polishing method has been in wide use for thinning a semiconductor wafer. In order to uniformly process a semiconductor wafer, for example, with a process accuracy of 5% according to the polishing method, it is essential that the semiconductor wafer be set parallel to a polishing device at high accuracy and high reproducibility. For realizing such a very high level of parallel setting, a very expensive apparatus is necessary, thus having involved a difficulty in practical applications.
An attempt has been made to effect a polishing method while monitoring the thickness of a semiconductor wafer. If a region with a large area is polished according to this method, it takes a very long time, resulting in the lowering of productivity.
Alternatively, when a semiconductor wafer is polished to a very small thickness, for example, of approximately 0.1 .mu.m there arises the problem that various types of semiconductor devices, such as transistors, formed on the surface of the semiconductor wafer are broken owing to the stress caused by the polishing.
Moreover, when such a thinned semiconductor chip is directly handled according to the prior art technologies, a problem is involved in that the semiconductor chip is broken. Thus, it has been difficult to form a semiconductor device in high yield at low costs.
DISCLOSURE OF THE INVENTION
Accordingly, an object of the invention is to provide a semiconductor device which can solve the problems of the prior art technologies, is unlikely to break owing to the bending stress exerted thereon, and can be utilized as various types of cards.
Another object of the invention is to provide a method for making a semiconductor device which is able to thin a semiconductor chip to a level of approximately 0.1 to 110 .mu.m and wherein such a very thin chip can be handled without involving any cracking occasion.
In order to achieve the above objects, there is provided a semiconductor device which comprises a thin semiconductor chip and a substrate which are faced to each other via an organic adhesive layer containing a multitude of conductive particles therein, a pad made of a conductive film and formed on the surface at the substrate side of the semiconductor chip, and a substrate electrode provided on the surface at the chip side of the substrate such that the pad and the substrate electrode are electrically connected to each other via the conductive particles.
The thin semiconductor chip and the substrate made of an elastic material, which are arranged in face-to-face relation with each other, are bonded and fixed together through the organic adhesive layer, so that when exerted with a bending stress from outside, they are very unlikely to break.
The electric connection between the semiconductor chip and the substrate is ensured by means of the conductive particles present in the organic adhesive. The conductive particles are defor
REFERENCES:
patent: 5656552 (1997-08-01), Hudak et al.
Nishi Kunihiko
Tsubosaki Kunihiro
Usami Mitsuo
Blum David S.
Bowers Charles
Hitachi , Ltd.
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