Semiconductor device and method for its preparation

Details Semiconductor device and method for its preparation Semiconductor device and method for its preparation

1978-11-13

1980-10-28

Edlow, Martin H.

357 47, 357 23, 357 55, H01L 2704

Patent

active

042310571

ABSTRACT:
An improved means and method for isolating semiconductor devices on a semiconductor substrate, comprising a shallow region formed between the semiconductor substrate and an epitaxial layer of each device, and between a buried layer of each device and an isolation region separating adjacent devices. The shallow region has conductivity type opposite to that of the semiconductor substrate and higher impurity concentration than that of the epitaxial layer.

REFERENCES:
patent: 4047195 (1977-09-01), Allison
patent: 4048649 (1977-09-01), Bohn
patent: 4051506 (1977-09-01), Horie
patent: 4106050 (1978-08-01), Riseman
patent: 4140558 (1979-02-01), Murphy

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