Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2011-03-08
2011-03-08
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S109000, C257SE27051
Reexamination Certificate
active
07902626
ABSTRACT:
In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes.
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Goerlach Alfred
Qu Ning
Kenyon & Kenyon LLP
Robert & Bosch GmbH
Wilson Allan R
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