Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-11-14
1997-12-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257194, H01L 29201
Patent
active
057010170
ABSTRACT:
A semiconductor device according to the invention is characterized by comprising a heterostructure which comprises an active layer in which carriers can flow within a conduction channel, the heterostructure including a recessed region in which part of the conduction channel is disposed and substantially in the same plane as a pair of side gate, thereby defining a restricted conduction region of the conduction channel.
REFERENCES:
patent: 5396089 (1995-03-01), Wieck et al.
patent: 5406094 (1995-04-01), Arimoto et al.
Peatman, et al., "Narrow Channel 2-D MESFET for Low Power Electronics," IEEE Transactions on Electron Devices, vol. 42, No. 9, Sep. 1995, pp. 1569-1573.
"In-Plane-Gated Quantum Wire Transistor Fabricated With Directly Written Focused Ion Beams" pp. 928-930. Appl. Phys. Letter. 56(10), Mar. 5, 1990. A. D. Wieck and K. Ploog.
"Quantized Conductance of Point Contacts in a Two-Dimensional Electron Gas" pp. 848-850. Physical Review Letters vol. 60, No. 9. B. J. Van Wees, et al., Feb. 1988.
"Fabrication and Characterisation of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells" pp. 521-523. Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. Giorgio Schweeger, et al.
Burroughes Jeremy H.
Patel Nalin K.
Guay John
Jackson Jerome
Kabushiki Kaisha Toshiba
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