Semiconductor device and method for its manufacture

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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Details

257 25, 257192, H01L 2906, H01L 310328, H01L 310336, H01L 31072

Patent

active

057010161

ABSTRACT:
A semiconductor device according to the invention is characterized by comprising a stacked structure which has a plurality of layers for providing rear barrier confinement potentials, an oblique side surface intersecting edges of the plurality of layers, at least one layer overlying the oblique side such that carriers can flow in a plane parallel to the oblique side surface, and narrowing means for causing carriers to flow over the edges of the plurality of layers, only in a direction of the oblique side surface.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4704622 (1987-11-01), Capasso et al.
patent: 4996574 (1991-02-01), Shirasaki
patent: 5446293 (1995-08-01), Chu

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