Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-11-24
1997-12-23
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, 257192, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
057010161
ABSTRACT:
A semiconductor device according to the invention is characterized by comprising a stacked structure which has a plurality of layers for providing rear barrier confinement potentials, an oblique side surface intersecting edges of the plurality of layers, at least one layer overlying the oblique side such that carriers can flow in a plane parallel to the oblique side surface, and narrowing means for causing carriers to flow over the edges of the plurality of layers, only in a direction of the oblique side surface.
REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4704622 (1987-11-01), Capasso et al.
patent: 4996574 (1991-02-01), Shirasaki
patent: 5446293 (1995-08-01), Chu
Arnone Donald D.
Burroughes Jeremy H.
Kabushiki Kaisha Toshiba
Meier Stephen
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