Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Recrystallized semiconductor material
Patent
1997-06-18
1999-04-27
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Recrystallized semiconductor material
257 65, 257 66, 257349, H01L 2904, H01L 29786
Patent
active
058981888
ABSTRACT:
The side surfaces of an active layer from which a thin-film transistor is constructed are annealed by laser light irradiation. Defects which occur during patterning concentrate at the side surfaces of the active layer, and due to the movement of carriers which results from these defects, an OFF current is generated. Thus, by improving the crystallinity of the side surfaces of the active layer and thereby reducing the number of defects it is possible to reduce the OFF current.
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Koyama Jun
Suzawa Hideomi
Teramoto Satoshi
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Guay John F.
Jackson Jerome
Semiconductor Energy Laboratory Co,. Ltd.
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