Semiconductor device and method for isolating the same

Details Semiconductor device and method for isolating the same Semiconductor device and method for isolating the same

2004-06-30

2009-08-25

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S433000, C438S422000, C438S702000, C257S522000, C257S506000, C257S528000

Reexamination Certificate

active

07579255

ABSTRACT:
The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one silicon pillar at a bottom portion of the trench, wherein the silicon pillar become sidewalls of micro trenches; and a device isolation layer selectively and partially filled into the plurality of micro trenches.

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Yongjik Park et al., Cob Stack Dram Cell Technology beyond 100 nm Technology Node, 2001, pp. 18.1.1-18.1.4, IEDM 01, IEEE.

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