Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

1993-08-25

1995-10-17

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 15, 437 40, 437225, 437235, 257408, 257410, H01L 21265

Patent

active

054590906

ABSTRACT:
A novel structure of TFT is described. In the structure of TFT, an anodic oxidation film, which is a material composing a gate electrode, is laid at the side of gate electrode. An electrode, which is connected to a source, drain region, is in contact with the upper surface and the side of the source, drain region, and extended on the upper surface of an insulation film which is laid on the gate electrode. In the preparation process of TFT, it can be completed by using only two sheets of mask.

REFERENCES:
patent: 4040073 (1977-08-01), Luo
patent: 4065781 (1977-12-01), Gutknecht
patent: 4236167 (1980-11-01), Woods
patent: 4336550 (1982-06-01), Medwin
patent: 5024960 (1991-06-01), Haken
patent: 5254866 (1993-10-01), Ogoh

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