Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2004-07-28

2008-08-26

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S609000, C257SE21192, C257SE21268, C257SE21413

Reexamination Certificate

active

07416907

ABSTRACT:
A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film.Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.

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