Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2006-12-12

2006-12-12

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S318000

Reexamination Certificate

active

07148115

ABSTRACT:
The present invention is related to semiconductor device and method for manufacturing the same. In accordance with the semiconductor device and method for manufacturing the same, at least one opening extending between LDD regions and exposing a buried insulating layer is formed so that a gate electrode surrounds the surface of a channel region. This structure allows the formation of a relatively a thick channel region and decreases the sensitivity of characteristics of the device dependent upon the thickness of the channel region.

REFERENCES:
patent: 6936875 (2005-08-01), Sugii et al.
Malgorzata Jurczak et al., “Silicon-on-Nothing (SON)-an Innovative Process for Advanced CMOS”, IEEE, Nov. 2000, pp. 2179-2187, vol. 47, No. 11.

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