Semiconductor device and method for forming device isolation...

Details Semiconductor device and method for forming device isolation... Semiconductor device and method for forming device isolation...

2011-01-11

2011-01-11

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S424000, C438S430000, C438S631000, C438S633000, C438S637000, C438S645000, C438S675000, C438S697000, C438S294000, C438S296000, C257S244000, C257S374000, C257S446000, C257S510000, C257S513000, C257SE21573, C257SE21577, C257SE21580, C257SE21581, C257SE21583

Reexamination Certificate

active

07867870

ABSTRACT:
A device isolation film in a semiconductor device and a method for forming the same are provided. The method includes etching a middle portion of a device isolation film having a deposition structure including a Spin-On-Dielectric (SOD) oxide film and a High Density Plasma (HDP) oxide film to form a hole and filling an upper portion of the hole with an oxide film having poor step coverage characteristics to form a second hole extending along the middle portion of the device isolation film. The second hole serves as a buffer for stress generated at the interface between an oxide film, which can be a device isolation film, and a silicon layer, which can be a semiconductor substrate, thereby increasing the operating current of a transistor and improving the electrical characteristics of the resulting device.

REFERENCES:
patent: 5903040 (1999-05-01), Hong
patent: 2003/0006476 (2003-01-01), Chen et al.
patent: 2005/0079730 (2005-04-01), Beintner et al.
patent: 2005/0280007 (2005-12-01), Hsu et al.
patent: 2007/0134884 (2007-06-01), Kim et al.

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