Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-07-15
2008-07-15
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21585, C257SE21587, C438S618000, C438S637000, C438S674000, C438S700000
Reexamination Certificate
active
07400045
ABSTRACT:
In a method for fabricating a semiconductor device, first, a first metal interconnect is formed in an interconnect formation region, and a second metal interconnect is formed in a seal ring region. Subsequently, by chemical mechanical polishing or etching, the upper portions of the first metal interconnect and the second metal interconnect are recessed to form recesses. A second insulating film filling the recesses is then formed above a substrate, and the upper portion of the second insulating film is planarized. Next, a hole and a trench are formed to extend halfway through the second insulating film, and ashing and polymer removal are performed. Subsequently to this, the hole and the trench are allowed to reach the first metal interconnect and the second metal interconnect.
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Japanese Office Action Issued in corresponding Japanese Patent Application No. 2003-335185, dated Aug. 22, 2006.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tran Long K.
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