Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-08-07
1999-10-05
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257 65, 257 69, H01L 2904, H01L 2976
Patent
active
059628723
ABSTRACT:
In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.
REFERENCES:
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4772927 (1988-09-01), Saito et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5475244 (1995-12-01), Koizumi et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5576556 (1996-11-01), Takemura et al.
Ohnuma Hideto
Takemura Yasuhiko
Yamaguchi Naoaki
Zhang Hongyong
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Martin Wallace Valencia
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1174360