Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-06-28
2011-06-28
Stark, Jarrett J (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S190000, C257S347000, C257SE27122, C257SE29255
Reexamination Certificate
active
07968912
ABSTRACT:
A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes first and second epitaxial layers including Ge, wherein the second epitaxial layer which is formed over an interfacial layer between the first epitaxial layer and the substrate has a higher germanium concentration than that of the first epitaxial layer.
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Ahn Tae-Hang
Kim Yong-soo
Pyi Seung-Ho
Yang Hong-Seon
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Stark Jarrett J
Tynes, Jr. Lawrence
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