Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-06-28
2011-06-28
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S686000, C257S678000, C257S067000, C257SE23142, C257SE25013
Reexamination Certificate
active
07968965
ABSTRACT:
Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a first device, a silicon epitaxial layer formed on and/or over the first device, a second device formed on and/or over the silicon epitaxial layer, and a connection via formed through the silicon epitaxial layer, which may electrically interconnect the first device and the second device. According to embodiments, a method for fabricating a semiconductor device may include forming a first device, forming a silicon epitaxial layer on and/or over the first device, forming a connection via through the silicon epitaxial layer, and forming a second device on and/or over the silicon epitaxial layer such that the second device may be electrically connected to the connection via.
REFERENCES:
patent: 4612629 (1986-09-01), Harari
patent: 6429484 (2002-08-01), Yu
patent: 7247528 (2007-07-01), Kwak et al.
patent: 100776157 (2007-11-01), None
Dongbu Hi-Tek Co., Ltd.
Liu Benjamin Tzu-Hung
Ngo Ngan
Sherr & Vaughn, PLLC
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